Фотографии | Производитель. Часть # | Доступность | Цены | Количество | Таблицы данных | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXFK32N80PMOSFET N-CH 800V 32A TO264AA |
3,348 | 16.59 |
RFQ |
![]() Datasheet |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 32A (Tc) | 10V | 270mOhm @ 16A, 10V | 5V @ 8mA | 150 nC @ 10 V | ±30V | 8800 pF @ 25 V | - | 830W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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UF4C120053K4S1200V/53MOHM, SIC, FAST CASCODE |
437 | 590.00 |
RFQ |
![]() Datasheet |
Tube | - | Active | N-Channel | SiCFET (Cascode SiCJFET) | 1200 V | 34A (Tc) | 12V | 67mOhm @ 20A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1370 pF @ 800 V | - | 263W (Tc) | -55°C ~ 175°C (TJ) | |
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IXFK98N60X3DISCRETE MOSFET 98A 600V X3 TO26 |
2,724 | 17.19 |
RFQ |
Tube | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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R6070JNZ4C13600V 70A TO-247, PRESTOMOS WITH |
2,580 | 17.26 |
RFQ |
![]() Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 70A (Tc) | 15V | 58mOhm @ 35A, 15V | 7V @ 3mA | 165 nC @ 15 V | ±30V | 6000 pF @ 100 V | - | 770W (Tc) | 150°C (TJ) | Through Hole |
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IXFH90N65X3MOSFET 90A 650V X3 TO247 |
3,728 | 17.56 |
RFQ |
![]() Datasheet |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 90A (Tc) | 10V | 33mOhm @ 45A, 10V | 5.2V @ 4mA | 95 nC @ 10 V | ±20V | 6080 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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6AM13N-CHANNEL AND P-CHANNEL, MOSFETS |
1,899 | 11.10 |
RFQ |
![]() Datasheet |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
VP2206N2MOSFET P-CH 60V 750MA TO39 |
1,311 | 18.39 |
RFQ |
![]() Datasheet |
Bag | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 750mA (Tj) | 5V, 10V | 900mOhm @ 3.5A, 10V | 3.5V @ 10mA | - | ±20V | 450 pF @ 25 V | - | 360mW (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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2SK1628-EN-CHANNEL POWER MOSFET |
3,860 | 11.62 |
RFQ |
![]() Datasheet |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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BTS240AHKSA1N-CHANNEL POWER MOSFET |
12,798 | 11.74 |
RFQ |
![]() Datasheet |
Bulk | * | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FCH029N65S3-F155MOSFET N-CH 650V 75A TO247-3 |
2,366 | 19.86 |
RFQ |
![]() Datasheet |
Tube | SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 75A (Tc) | - | 29mOhm @ 37.5A, 10V | 4.5V @ 7mA | 201 nC @ 10 V | ±30V | 6340 pF @ 400 V | - | 463W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IMW65R039M1HXKSA1SILICON CARBIDE MOSFET, PG-TO247 |
3,251 | 19.90 |
RFQ |
![]() Datasheet |
Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 46A (Tc) | 18V | 50mOhm @ 25A, 18V | 5.7V @ 7.5mA | 41 nC @ 18 V | +20V, -2V | 1393 pF @ 400 V | - | 176W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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R6576ENZ4C13650V 76A TO-247, LOW-NOISE POWER |
4,157 | 20.39 |
RFQ |
![]() Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 76A (Ta) | 10V | 46mOhm @ 44.4A, 10V | 4V @ 2.96mA | 260 nC @ 10 V | ±20V | 6500 pF @ 25 V | - | 735W (Tc) | 150°C (TJ) | Through Hole |
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IMZA65R039M1HXKSA1SILICON CARBIDE MOSFET, PG-TO247 |
2,035 | 20.64 |
RFQ |
![]() Datasheet |
Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 50A (Tc) | 18V | 50mOhm @ 25A, 18V | 5.7V @ 7.5mA | 41 nC @ 18 V | +20V, -2V | 1393 pF @ 400 V | - | 176W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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H5N3011P80-E#T2N-CHANNEL POWER MOSFET |
4,702 | 12.62 |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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TW060N120C,S1FG3 1200V SIC-MOSFET TO-247 60MO |
4,407 | 20.79 |
RFQ |
![]() Datasheet |
Tube | - | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 36A (Tc) | 18V | 78mOhm @ 18A, 18V | 5V @ 4.2mA | 46 nC @ 18 V | +25V, -10V | 1530 pF @ 800 V | - | 170W (Tc) | 175°C | Through Hole |
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TP65H035G4WSQA650 V 46.5 GAN FET |
2,930 | 21.04 |
RFQ |
![]() Datasheet |
Tube | Automotive, AEC-Q101 | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 47.2A (Tc) | 10V | 41mOhm @ 30A, 10V | 4.8V @ 1mA | 22 nC @ 10 V | ±20V | 1500 pF @ 400 V | - | 187W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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SIHS90N65E-GE3E SERIES POWER MOSFET SUPER-247 |
627 | 508.00 |
RFQ |
![]() Datasheet |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 87A (Tc) | 10V | 29mOhm @ 45A, 10V | 4V @ 250µA | 591 nC @ 10 V | ±30V | 11826 pF @ 100 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | |
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NTH4LN019N65S3HPOWER MOSFET, N-CHANNEL, SUPERFE |
4,427 | 22.59 |
RFQ |
![]() Datasheet |
Tube | SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 75A (Tc) | 10V | 19.3mOhm @ 37.5A, 10V | 4V @ 14.3mA | 282 nC @ 10 V | ±30V | 15993 pF @ 400 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IMW65R030M1HXKSA1SILICON CARBIDE MOSFET, PG-TO247 |
4,346 | 23.35 |
RFQ |
![]() Datasheet |
Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 58A (Tc) | 18V | 42mOhm @ 29.5A, 18V | 5.7V @ 8.8mA | 48 nC @ 18 V | +20V, -2V | 1643 pF @ 400 V | - | 197W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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TW027N65C,S1FG3 650V SIC-MOSFET TO-247 27MOH |
3,449 | 23.78 |
RFQ |
![]() Datasheet |
Tube | - | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 58A (Tc) | 18V | 37mOhm @ 29A, 18V | 5V @ 3mA | 65 nC @ 18 V | +25V, -10V | 2288 pF @ 400 V | - | 156W (Tc) | 175°C | Through Hole |