Фотографии | Производитель. Часть # | Доступность | Цены | Количество | Таблицы данных | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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UJ4C075033K3S750V/33MOHM, SIC, CASCODE, G4, T |
1,412 | 11.39 |
RFQ |
![]() Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 47A (Tc) | 12V | 41mOhm @ 30A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1400 pF @ 400 V | - | 242W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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C3M0120090DSICFET N-CH 900V 23A TO247-3 |
4,461 | 11.47 |
RFQ |
![]() Datasheet |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 23A (Tc) | 15V | 155mOhm @ 15A, 15V | 3.5V @ 3mA | 17.3 nC @ 15 V | +18V, -8V | 414 pF @ 600 V | - | 97W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXTT24P20MOSFET P-CH 200V 24A TO268 |
1,069 | 11.60 |
RFQ |
![]() Datasheet |
Tube | - | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 24A (Tc) | 10V | 110mOhm @ 500mA, 10V | 5V @ 250µA | 150 nC @ 10 V | ±20V | 4200 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IXKH35N60C5MOSFET N-CH 600V 35A TO247AD |
2,962 | 11.62 |
RFQ |
![]() Datasheet |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 35A (Tc) | 10V | 100mOhm @ 18A, 10V | 3.9V @ 1.2mA | 70 nC @ 10 V | ±20V | 2800 pF @ 100 V | Super Junction | - | -55°C ~ 150°C (TJ) | Through Hole |
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2SK2595AXTB-EN-CHANNEL POWER MOSFET |
8,930 | 8.39 |
RFQ |
![]() Datasheet |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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TW140N120C,S1FG3 1200V SIC-MOSFET TO-247 140M |
2,606 | 11.91 |
RFQ |
![]() Datasheet |
Tube | - | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 20A (Tc) | 18V | 182mOhm @ 10A, 18V | 5V @ 1mA | 24 nC @ 18 V | +25V, -10V | 691 pF @ 800 V | - | 107W (Tc) | 175°C | Through Hole |
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NTE2376MOSFET N-CHANNEL 200V 30A TO247 |
3,141 | 12.02 |
RFQ |
![]() Datasheet |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 30A (Tc) | 10V | 85mOhm @ 18A, 10V | 4V @ 250µA | 140 nC @ 10 V | ±20V | 2800 pF @ 25 V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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UJ4C075044K3S750V/44MOHM, SIC, CASCODE, G4, T |
2,891 | 12.17 |
RFQ |
![]() Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 37.4A (Tc) | 12V | 56mOhm @ 25A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1400 pF @ 400 V | - | 203W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IXFT60N60X3HVMOSFET ULTRA 600V 60A TO268HV |
4,030 | 12.23 |
RFQ |
![]() Datasheet |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 60A (Tc) | 10V | 51mOhm @ 30A, 10V | 5V @ 4mA | 51 nC @ 10 V | ±20V | 3450 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IXFH54N65X3MOSFET 54A 650V X3 TO247 |
2,478 | 12.36 |
RFQ |
![]() Datasheet |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 54A (Tc) | 10V | 59mOhm @ 27A, 10V | 5.2V @ 4mA | 49 nC @ 10 V | ±20V | 3360 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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NTHL060N065SC1SIC MOS TO247-3L 650V |
3,299 | 12.50 |
RFQ |
![]() Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 47A (Tc) | 15V, 18V | 70mOhm @ 20A, 18V | 4.3V @ 6.5mA | 74 nC @ 18 V | +22V, -8V | 1473 pF @ 325 V | - | 176W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IXFA72N20X3MOSFET N-CH 200V 72A TO263AA |
5,191 | 8.67 |
RFQ |
![]() Datasheet |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 72A (Tc) | 10V | 20mOhm @ 36A, 10V | 4.5V @ 1.5mA | 55 nC @ 10 V | ±20V | 3780 pF @ 25 V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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STW56N65DM2MOSFET N-CH 650V 48A TO247 |
4,061 | 12.57 |
RFQ |
![]() Datasheet |
Tube | MDmesh™ DM2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 48A (Tc) | 10V | 65mOhm @ 24A, 10V | 5V @ 250µA | 88 nC @ 10 V | ±25V | 4100 pF @ 100 V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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NTH4L060N090SC1SILICON CARBIDE MOSFET, NCHANNEL |
1,408 | 12.61 |
RFQ |
![]() Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 46A (Tc) | 15V, 18V | 43mOhm @ 20A, 18V | 4.3V @ 5mA | 87 nC @ 15 V | +22V, -8V | 1770 pF @ 450 V | - | 221W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IMW65R083M1HXKSA1SILICON CARBIDE MOSFET, PG-TO247 |
1,860 | 12.65 |
RFQ |
![]() Datasheet |
Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 24A (Tc) | 18V | 111mOhm @ 11.2A, 18V | 5.7V @ 3.3mA | 19 nC @ 18 V | +20V, -2V | 624 pF @ 400 V | - | 104W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IXTT10P60MOSFET P-CH 600V 10A TO268 |
4,075 | 12.70 |
RFQ |
![]() Datasheet |
Tube | - | Active | P-Channel | MOSFET (Metal Oxide) | 600 V | 10A (Tc) | 10V | 1Ohm @ 5A, 10V | 5V @ 250µA | 160 nC @ 10 V | ±20V | 4700 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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UJ4C075044K4S750V/44MOHM, SIC, CASCODE, G4, T |
1,796 | 12.71 |
RFQ |
![]() Datasheet |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 37.4A (Tc) | 12V | 56mOhm @ 25A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1400 pF @ 400 V | - | 203W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IXTH60N20X4MOSFET ULTRA X4 200V 60A TO-247 |
3,758 | 12.76 |
RFQ |
![]() Datasheet |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 60A (Tc) | 10V | 21mOhm @ 30A, 10V | 4.5V @ 250µA | 33 nC @ 10 V | ±20V | 2450 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IXFH60N65X2-4MOSFET N-CH 650V 60A TO247-4L |
4,399 | 12.86 |
RFQ |
![]() Datasheet |
Tube | HiPerFET™, Ultra X2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 60A (Tc) | 10V | 52mOhm @ 30A, 10V | 5V @ 4mA | 108 nC @ 10 V | ±30V | 6300 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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NVH4L060N090SC1- |
1,722 | 13.09 |
RFQ |
Tube | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |